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IRGP4760D-EPbF Datasheet, International Rectifier

IRGP4760D-EPbF transistor equivalent, insulated gate bipolar transistor.

IRGP4760D-EPbF Avg. rating / M : 1.0 rating-13

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IRGP4760D-EPbF Datasheet

Features and benefits

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs complia.

Application


* Industrial Motor Drive
* UPS
* Solar Inverters
* Welding Features Low VCE(ON) and Switching Losses 5.5.

Image gallery

IRGP4760D-EPbF Page 1 IRGP4760D-EPbF Page 2 IRGP4760D-EPbF Page 3

TAGS

IRGP4760D-EPbF
Insulated
Gate
Bipolar
Transistor
IRGP4760DPbF
IRGP4760-EPbF
IRGP4760PbF
International Rectifier

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